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Observation of Large Magnetic Field Effects in Organic Light Emitting Diodes

机译:有机发光二极管中大磁场效应的观察

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Large magnetic field effects (MFE) have been observed in organic light emitting diodes (OLED) based on a bilayer of tris (8-hydroxyquinoline) aluminum (Alq_3) and N,N' -Di(naphthalen-1-yl)-N,N'diphenyl-benzidine (NPB). They consist of an increase in electroluminescence (EL) of a few percent at low magnetic fields followed by a decrease in EL of 20+% at high fields. Associated with these two effects is a decrease in resistance of typically 1-3% as the magnetic field is increased. The magnitude of the high field effect (HFE) varies with temperature and current density, while the low field effect (LFE) survives even when the HFE is not present. The HFE is enhanced at low temperature and/or high current density. These effects are similar to those reported for anthracene single crystals suggesting a large triplet-triplet annihilation (TTA) component for the EL in Alq_3. However, transient EL studies fail to definitively identify a delayed luminescence component with a time scale appropriate for TTA in Alq_3. We discuss this and other questions concerning the origin of MFE in this system.
机译:在基于三(8-羟基喹啉)铝(Alq_3)和N,N'-Di(萘-1-基)-N双层的有机发光二极管(OLED)中,观察到大的磁场效应(MFE), N'二苯基联苯胺(NPB)。它们包括在低磁场下电致发光(EL)增加百分之几,然后在高磁场下将电致发光(EL)减少百分之20+。与这两种效应相关的是,随着磁场的增加,电阻通常会降低1-3%。高场效应(HFE)的大小随温度和电流密度而变化,而即使不存在HFE,低场效应(LFE)仍然存在。 HFE在低温和/或高电流密度下会增强。这些效应与报道的蒽单晶相似,表明Alq_3中的EL具有大量的三重态-三重态an灭(TTA)成分。但是,瞬态EL研究未能以适合Alq_3中TTA的时间尺度最终确定延迟发光成分。我们讨论此问题以及有关此系统中MFE起源的其他问题。

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