Ground bouncing noise produced during the sleep to active mode transitions is an important reliability concern in multi-domain Multi-Threshold CMOS (MTCMOS) integrated circuits. Ground bouncing noise, leakage power consumption, and data stability of MTCMOS flip-flops are evaluated in this paper. The effectiveness of different circuit techniques is discussed for achieving lower noise during the reactivation events while maintaining robust and low-leakage data retention capability in MTCMOS flip-flops.
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