首页> 外文会议>2010 International Conference on Applications of Electromagnetism and Student Innovation Competition Awards >A study of the relationship between on-chip power distribution network voltage noise, charge per clock cycle, on-chip decoupling capacitance and clock jitter in a 40-nm field programmable gate array test chip
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A study of the relationship between on-chip power distribution network voltage noise, charge per clock cycle, on-chip decoupling capacitance and clock jitter in a 40-nm field programmable gate array test chip

机译:研究40nm现场可编程门阵列测试芯片中的片上配电网络电压噪声,每个时钟周期的电荷,片上去耦电容和时钟抖动之间的关系

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摘要

As technology process nodes continue to shrink, the performance of nano-technology devices becomes increasingly dependent on power quality. With core logic voltage reduced to 0.9 V, 40-nm devices are more susceptible to on-chip power distribution network (PDN) voltage noise. On-chip PDN voltage noise increases jitter and reduces a circuit's timing margin, which may lead to performance failures due to timing violations. This paper presents a study of the relationship between on-chip PDN voltage noise, charge per clock cycle (QCYCLE), on-chip decoupling capacitance (ODC), and internal clock period jitter. This study investigates the impact of on-chip PDN voltage noise, generated by switching internal logic elements, on jitter performance using two Altera 40-nm field programmable gate array (FPGA) test chips. The results from this study can aid chip designers in optimizing power quality, thereby achieving error-free timing design goals.
机译:随着技术过程节点的不断缩小,纳米技术设备的性能越来越依赖于电能质量。随着内核逻辑电压降低到0.9 V,40 nm器件更容易受到片上配电网络(PDN)电压噪声的影响。片上PDN电压噪声会增加抖动并降低电路的时序裕度,这可能会由于时序违规而导致性能故障。本文介绍了片上PDN电压噪声,每时钟周期电荷(QCYCLE),片上去耦电容(ODC)和内部时钟周期抖动之间的关系。这项研究使用两个Altera 40纳米现场可编程门阵列(FPGA)测试芯片,研究由内部逻辑元件切换产生的片上PDN电压噪声对抖动性能的影响。这项研究的结果可以帮助芯片设计人员优化电源质量,从而实现无错误的时序设计目标。

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