首页> 外文会议>2010 IEEE International Reliability Physics Symposium >Low-side driver's failure mechanism in a class-D amplifier under short circuit test and a robust driver device
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Low-side driver's failure mechanism in a class-D amplifier under short circuit test and a robust driver device

机译:D类放大器在短路测试下的低端驱动器故障机制和强大的驱动器设备

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摘要

The failure mechanism in a class-D audio amplifier under short-circuit test is analyzed. The damage, always in the low-side driver, is due to high current induced thermal run-away, which occurs during the shutdown after the over-current is detected. However, this high current doesn't come from the over-current itself since the current is limited to below that the transistor in the class-D amplifier can sustain. Instead, the damage is caused by the displacement current when there is a large voltage change at the output of the class-D amplifier. Although the shutdown circuit is designed to prevent the high current flowing through the transistors of the class-D amplifier, it cannot prevent the current coming from the class-D amplifier itself. To eliminate the damage, the output transistors should be designed robust enough to against the low-pass filter induced large voltage swing.
机译:分析了短路测试中D类音频放大器的失效机理。损坏总是发生在低侧驱动器中,是由于高电流引起的热失控,该失控是在检测到过电流后的停机期间发生的。但是,此高电流并非来自过电流本身,因为电流被限制为低于D类放大器中的晶体管可以承受的电流。相反,当D类放大器的输出电压发生较大变化时,位移电流会引起损坏。尽管关闭电路旨在防止高电流流过D类放大器的晶体管,但它不能防止电流来自D类放大器本身。为了消除损坏,输出晶体管的设计应足够坚固,以抵抗低通滤波器引起的大电压摆幅。

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