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HgCdTe technology in Germany - the past, the present and the future

机译:HgCdTe技术在德国-过去,现在和未来

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The first HgCdTe (MCT) activities at AEG-Telefunken in Germany were started in 1976. As part of the closing of AEG, the Heilbronn based IR-technology division was established as a spin-off company in 1995, under the brand name of AIM Infrarot-Module GmbH. A rapidly growing team of scientists focused on the detector-dewar-cooler technology and the development of linear photoconductive MCT arrays by applying the solid-state-recrystallization (SSR) technique for MCT growth, depositing and thinning MCT on sapphire substrates and oxide passivation. In 1979, after successful development of an own MCT-technology base, AEG-Telefunken entered into a license agreement with Texas Instruments for US Common Module (CM) technology in order to speed up the entry into full scale production with a transfer of MCT-material, dewar and cooler processes. CMs are still manufactured in small numbers. At the same time, a proprietary pc-MCT technology, independent of the CM production line, was developed and continuously matured and is today successfully applied in various custom designs like detectors for smart ammunition, for commercial and space applications.In 1982 started the development of 2nd Gen. photovoltaic MCT detectors, based on liquid-phase-epitaxy (LPE) in tilting and dipping technique and on planar array technology with Hg-Diffusion and ion implantation for pn-junction formation and CdTe/ZnS passivation. Linear MCT arrays in the 8.10,5 μm wavelength range with state of the art electro-optical performance have rapidly been demonstrated.Within the frame of the European anti-tank program TRIGAT, a two-way know-how-transfer between AEG-Telefunken and SOFRADIR was established for linear LW MCT array processing, flip-chip-technology and dewar technology.Today, AIM's 2nd Gen. portfolio is based on MCT-LPE in dipping technique on CdZnTe substrates, characterized by a very low defect and dislocation density for 0,9 μm to 15μm wavelength application. Array processing is performed by planar technique, Boron ion implantation, CdTe/ZnS passivation and intrinsic or extrinsic doping, respectively. Infrared systems with AIM's linear and 2-dim. Focal-Phase-Arrays are used in many state of the art programs in Germany and internationally for surveillance and targeting, seeker head systems or for spaceborne applications like e.g. hyperspectral imaging.AIM's current MCT developments include for example MW/LW-MBE-MCT layers and array processing for 3rd Gen. detectors, avalanche NIR-MCT photodiodes for low background application, MBE on 4" alternative substrates and 2-dim. arrays with very long 15μm cut-off for space-based application to meet the future demands of IR-systems.
机译:1976年在德国AEG-Telefunken开始了第一批HgCdTe(MCT)活动。作为AEG关闭的一部分,基于Heilbronn的IR技术部门于1995年成立为分拆公司,品牌名称为AIM。 Infrarot-Module GmbH。一个迅速成长的科学家团队致力于通过采用固态重结晶(SSR)技术在蓝宝石衬底上生长,沉积和减薄蓝宝石以及氧化物钝化的固态再结晶(SSR)技术,来研究杜瓦瓶冷却器技术和线性光电导MCT阵列的开发。 1979年,在成功开发了自己的MCT技术基础之后,AEG-Telefunken与德州仪器(Texas Instruments)签订了美国通用模块(CM)技术的许可协议,目的是通过转让MCT-材料,杜瓦瓶和冷却器过程。 CM仍少量生产。同时,独立于CM生产线的专有pc-MCT技术已经开发并不断成熟,如今已成功应用于各种定制设计,例如用于智能弹药的探测器,商业和太空应用。 1982年开始开发第二代光伏MCT检测器,该技术基于倾斜和浸渍技术中的液相外延(LPE)以及Hg扩散和离子注入用于pn结形成和CdTe / ZnS钝化的平面阵列技术。已经迅速证明了8.10,5μm波长范围内的线性MCT阵列具有最先进的电光性能。 在欧洲反坦克计划TRIGAT的框架内,建立了AEG-Telefunken和SOFRADIR之间的双向技术转让,以用于线性LW MCT阵列处理,倒装芯片技术和杜瓦技术。 如今,AIM的第二代产品组合基于MCT-LPE在CdZnTe衬底上的浸渍技术,其特征是在0.9μm至15μm波长的应用中具有非常低的缺陷和位错密度。阵列处理分别通过平面技术,硼离子注入,CdTe / ZnS钝化和本征或非本征掺杂进行。带有AIM线性和2暗的红外系统。聚焦相控阵在德国和国际上被用于许多先进的程序中,用于监视和瞄准,搜索头系统或用于太空应用,例如雷达。高光谱成像。 AIM当前的MCT开发包括例如用于第三代探测器的MW / LW-MBE-MCT层和阵列处理,用于低本底应用的雪崩NIR-MCT光电二极管,在4英寸替代基板上的MBE以及非常长的15μm的2维阵列用于天基应用的临界值,以满足红外系统的未来需求。

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