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Ultra high frequency (UHF) phononic crystal devices operating in mobile communication bands

机译:在移动通信频段中运行的超高频(UHF)声子晶体设备

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Recently phononic crystal slabs operating in the very high frequency (VHF) range have been reported and have gained interest for RF signal processing. This paper reports phononic crystal slabs and devices operating in the commonly used GSM-850 and GSM-900 cellular phone bands, representing nearly an order of magnitude increase in operating frequency compared to the state-of-the-art. Phononic crystals centered at 943 MHz are formed by arranging 1.4 ¿m diameter W rods in a square lattice with a pitch of 2.5 ¿m inside a 1.85 ¿m thick suspended SiO2 membrane. The resulting phononic crystal has a bandgap width of 416 MHz or 44% and a maximum bandgap depth of 35 dB. Waveguide devices formed by placing defects in the phononic lattice have also been realized with propagation frequencies of 780 and 1060 MHz.
机译:最近,已经报道了在甚高频(VHF)范围内工作的声子晶体平板,并引起了人们对RF信号处理的兴趣。本文报道了在常用的GSM-850和GSM-900蜂窝电话频段中工作的声子晶体平板和设备,与最新技术相比,工作频率提高了近一个数量级。通过将1.4微米直径的W棒排列在一个间距为2.5微米的方格中的1.85微米的位置内,形成以943 MHz为中心的声子晶体。一米厚的悬浮SiO 2 膜。所得的声子晶体的带隙宽度为416 MHz或44%,最大带隙深度为35 dB。通过将缺陷放置在声子晶格中而形成的波导装置也已经实现了具有780和1060MHz的传播频率。

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