首页> 外文会议>Ultrasonics Symposium (IUS), 2009 >Influence of AlN quality on the transverse and longitudinal coupling coefficients of acoustic devices
【24h】

Influence of AlN quality on the transverse and longitudinal coupling coefficients of acoustic devices

机译:AlN质量对声学装置横向和纵向耦合系数的影响

获取原文
获取外文期刊封面目录资料

摘要

The transverse and longitudinal piezoelectric response of AlN polycrystalline thin films is analyzed by means of measurements in surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices fabricated on films of identical characteristics. The crystal quality of the films is correlated with the measured coupling factors; it is found that the presence of grains with the c-axis tilted with respect to the substrate normal is detrimental to the piezoelectric response of AlN. However, the presence of tilted crystal affects differently the longitudinal and transverse response of the devices, degrading more severely the latter as the amount of tilted grains increases. The presence of such defects leads to the destruction of the mechanical coherence in the transverse deformation when the electric field parallel to the surface is applied.
机译:通过在相同特性的薄膜上制造的表面声波(SAW)和体声波(BAW)器件中进行测量,来分析AlN多晶薄膜的横向和纵向压电响应。薄膜的晶体质量与测得的耦合因子相关。已经发现,c轴相对于基板法线倾斜的晶粒的存在不利于AlN的压电响应。但是,倾斜晶体的存在对器件的纵向和横向响应产生不同的影响,随着倾斜晶粒数量的增加,器件的纵向和横向响应会更加严重地退化。当施加平行于表面的电场时,这些缺陷的存在会导致横向变形中的机械相干性破坏。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号