Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surfaces

摘要

Density functional calculations were carried out to study the binding energies and diffusion barriers of various adatoms on AlN and GaN (0001) surfaces. The binding energies and potential energy surfaces were investigated for Al, Ga, and N adatoms on both Al (Ga) terminated and N terminated (0001) surfaces of AlN (GaN). Calculations were performed to investigate the diffusion paths and obtain diffusion energy barriers of these adatoms. It was found that the N adatom on N terminated AlN and GaN surfaces faces a high diffusion barrier due to strong N-N bond. The Al and Ga adatom on Al (Ga) terminated AlN (GaN) surfaces showed lower diffusion barriers due to the weak metallic bonds. However, the diffusion barrier for an Al adatom was always larger than that of a Ga adatom on any surface. To investigate the effect of strain on diffusion barriers the surfaces were subjected to a hydrostatic compressive and tensile strain in the range of 0 to 5%. The diffusion energy barrier for N adatom on N terminated AlN and GaN surfaces decreased when the strain state was changed from tensile to compressive. In contrast, Al and Ga adatoms show continuous increase in diffusion barriers from tensile to compressively strained Al (Ga) terminated AlN (GaN) surfaces.