We report the results of experiments that attempt to deposit n-type CVD diamond in a standard hot filament reactor using 1%CH_4/H_2 gas mixtures, using (i) AsH_3 as a gas phase source of arsenic, and (ii) evaporated Sb or Sb(Ph)_3 as a source of antimony. SIMS measurements revealed that under these conditions, neither Sb nor As is incorporated into the diamond film, and the Raman spectra, electrical conductivity and crystallite morphology remain unchanged from that of undoped diamond. These experiments confirm the predicted low incorporation efficiency for As and Sb, and we conclude that doping CVD diamond with these elements cannot readily be achieved in this manner.
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