We have measured the absorption spectrum of three kind resistivity p-type silicons by backward-wave oscillator (BWO).The absorption spectrum is examined and analyzed by least square method. The refractive index, absorption coefficient, and dielectric functions of various resistivity p-type silicons are obtained in the frequency range extending from 0.23 THz to 0.375 THz. The experimental results indicate that the absorption coefficient of the p-type silicons are decreased with the resistivity increase and its least absorption coefficient equals 3.87×10~(-4) cm~(-1). Our results demonstrate that the applicability of the backward-wave oscillator THz absorption spectroscopy to p-type silicon characteristic analysis by calculating the absorption spectra. This work establishes the basic spectra data for the various resistivity p-type silicons are very significative to design the terahertz waveguide with low loss.
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