A Low Q_(GD) and Low Specific On-resistance Power Trench ~TM MOSFET for Power Supply Applications

摘要

An optimized power MOSFET is a key component in power supply design. An ideal MOSFET should have low conduction loss, low switching loss, a nearly ideal body diode, high unclamped inductive switching (UIS) capability, and a low cost. Fairchild Semiconductor presents a new Power Trench ~TM (PT) MOSFET technology with optimized r_(DS(on)), Q_(GD), high V_(GS(th)) and low Q_(RR) & t_(RR). In a number of applications including SMPS, Class-D audio, electrical tool motor drives, UPS, PDP, & LCD TV power supplies, these parameters are crucial. The new medium voltage PT technology MOSFET not only exhibit very low specific r_(DS(on)), low Q_(GD), but also a low Q_(GD) / Q_(GS) ratio. A soft reverse recovery body diode with low Q_(RR) and t_(RR) is achieved through a Stealth rectifier design of the body diode structure. The excellent body diode characteristics not only reduce the power loss to improve efficiency, but also improve reliability. This trench-gate MOSFET has improved performance over a best in class trench MOSFETs.