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In-situ TEM observation on nanostructure evolution during electrical stressing

机译：电应力过程中纳米结构演化的原位TEM观察

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We evaluated the electrical properties and change of nanostructure of Cu doped SiO₂ and Ge₂Sb₂Te₅ (GST) thin film under electrical stressing. Specialized scanning tunneling microscopy (STM)-transmission electron

机译：我们评估了Cu掺杂的SiO _{2 和Ge _{2 Sb _{2 Te _{5 的电学性质以及纳米结构的变化（ GST）薄膜在电应力作用下。专门的扫描隧道显微镜（STM）-透射电子}}}}

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《Non-Volatile Memory Technology Symposium, 2007 》|2007年|P.79-81|共3页
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作者
Jiyoung Kim; Kyu-Jeong Choi; Dongkyu Cha; Kim; M.J.; Sung-Min Yoon; Byoung-gon Yu;
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中图分类工业技术 ;
关键词
copper; crystallisation; electric properties; germanium compounds; nanostructured materials; scanning tunnelling microscopy; silicon; silicon compounds; thin films; transmission electron microscopy; Cu nanoclusters; Gesub2/subSbsub2/subTesub5/sub; STM; Si;

机译：铜;结晶;电性能;锗化合物;纳米结构材料;扫描隧道显微镜;硅;硅化合物;薄膜;透射电镜; Cu纳米团簇; Ge _{2 Sb _{2 Te _{5 ; STM; Si;}}}

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In-situ TEM observation on nanostructure evolution during electrical stressing

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