Magnetic and Electronic Properties of n-type (Al,Ga) co-doped Zn(Cu)O based Dilute Magnetic Semiconductors

摘要

Systematic studies on the epitaxial growth and the effect of n-type (Al,Ga) doping on the magnetic and electrical properties of 2.0 % Cu doped ZnO dilute magnetic semiconducting thin films deposited on c-plane sapphire single crystals by pulsed laser deposition are reported here. An decrease in more than 3 orders of magnitude in resistivity from 2 x10~1 Ohm cm for the 2.0 % Cu doped ZnO to ～5 x10~-3 Ohm cm for Al and Ga codoped films is observed. This increase in conductivity does not show any effect on ferromagnetic ordering thus contradicting the claim of free carrier mediated exchange as being responsible for ferromagnetic ordering in these DMS systems. A bound magnetic polaron or F-center mediated exchange is a possible explanation for the origin of ferromagnetism in these ZnO based DMS thin films.