Single Asperity Tribochemical Wear of Silicon by Atomic Force Microscopy

摘要

We report measurements of single asperity wear on oxidized silicon surface in aqueous KOH using atomic force microscopy (AFM), where the single crystal silicon tip was used both to tribologically load and image the surface. AFM was also operating in the lateral (frictional) force mode (LFM) to investigate the pH dependence of kinetic friction between the tip and the SiO_2 surface. We found that the Si tip wear amount strongly depended on the solution pH value and was at a maximum at around pH 10. It was also found that the Si removal volume in moles was approximately equal to that of SiO_2 irrespective of the solution pH value. This equality implies that the formation of the Si-O-Si bridge between one Si atom of the tip and one SiO_2 molecule of the specimen at the wear interface, followed by the oxidation of the Si surface, finally the bond rupture by the tip movement, the dimeric silica (OH)_3Si-O-Si(OH)_3, including the Si-O-Si bridge is dissolved in the KOH solution. It was also found the frictional force is highly sensitive to the pH values of the solution and peaked at around pH 10. These results indicate that the interfacial reaction would be affected by the frictional force between the Si tip and the SiO_2 surface, due to an increased liquid temperature and a compressive stress in Si and SiO_2 networks. Strong influence is observed by the pH of the ambient solution confirming the important role of the OH- in the wear mechanism. We present a microscopic removal mechanism which is determined by an interplay of the diffusion of water in Si and SiO_2.