首页> 外文会议>Power electronics technology exhibition conference >AN EXTREMELY LOW ESR AND ESL ANNULAR FILM CAPACITOR
【24h】

AN EXTREMELY LOW ESR AND ESL ANNULAR FILM CAPACITOR

机译:极低的ESR和ESL环形薄膜电容器

获取原文

摘要

Across the industry, the traditional approach to input circuit design of Large Switching PowerSystems is the use of bulk storage Aluminum Electrolytic Capacitors in parallel with banks ofHigh Frequency Bypass Film Capacitors. SBE Inc. has developed an innovative new approachto address problems typically associated with this method. SBE has designed a single annularform factor dry film capacitor, which simultaneously addresses the bulk storage and ripplecurrent requirement. This novel solution allows for a low profile bus structure and inherentlyresults in extremely low ESR and ESL. A design is presented along with data on the RippleCurrent Capability, ESR and ESL as well as other system level thermal managementsimplification possibilities.
机译:在整个行业中,传统的大型开关电源输入电路设计方法 系统是将大容量存储铝电解电容器与电容器组并联使用 高频旁路薄膜电容器。 SBE Inc.开发了一种创新的新方法 解决通常与此方法有关的问题。 SBE设计了单个环形 外形尺寸干膜电容器,可同时解决大容量存储和纹波问题 当前要求。这种新颖的解决方案允许采用低调的总线结构,并且固有地 导致极低的ESR和ESL。涟漪图上显示了设计以及数据 电流能力,ESR和ESL以及其他系统级热管理 简化的可能性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号