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Structural, Electronic and Elastic Properties of Various Phases of Si_3P_4

机译:Si_3P_4不同相的结构,电子和弹性性质

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Using the local-density approximation (LDA) and generalized-gradient approximation (GGA) based on density-functional theory (DFT), we investigate structural, electronic and elastic properties of the fivee phases of Si_3P_4, including β, γ, pseudocubic, cubic, and defect cubic phases with space groups P6_3/m, Fd-3m, P-42m, 1M-3M, P-43m, respectively. It is found that both pseudocubic and defect cubic phases with defect zinc-blende structures are energetically favored relative to other phases considered. The elastic constant calculations show that two energetically favored phases have large shear moduli relative to other phases. The band-structure and partial density-of-states calculations reveal that pseudocubic and defect cubic phases are semi-conducting, while β, γ, and cubic phases are metallic within both LDA and GGA.
机译:使用基于密度泛函理论(DFT)的局部密度近似(LDA)和广义梯度近似(GGA),我们研究了Si_3P_4的五个相(包括β,γ,伪立方,立方)的结构,电子和弹性性质,和分别具有空间组P6_3 / m,Fd-3m,P-42m,1M-3M,P-43m的缺陷立方相。发现相对于所考虑的其他相,在能量上有利于具有缺陷锌-闪锌矿结构的伪立方相和缺陷立方相。弹性常数计算表明,在能量上有利的两个相相对于其他相具有较大的剪切模量。能带结构和部分状态密度计算表明,在LDA和GGA中,伪立方相和缺陷立方相均为半导体,而β,γ和立方相均为金属。

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