Behavior of vacancies in EP-Cu films by positron-annihilation lifetime spectroscopy and its impact on SIV phenomena

机译：正电子an没寿命光谱法研究EP-Cu膜中的空位行为及其对SIV现象的影响

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The behavior of vacancies in electroplated-Cu films has been characterized by a positron-annihilation lifetime spectroscopy (PALS) method correlated with stress-induced voiding (SIV) phenomena. Positron lifetime showed inverse correlation with sheet resistance, and Cu films plated with lower plating currents showed less lifetime (/spl tau/) and intensity (I) of long-lifetime components than those plated with higher currents with less SIV failures.

机译：电镀铜膜中空位的行为已通过与应力诱发的空隙（SIV）现象相关的正电子an没寿命光谱（PALS）方法进行了表征。正电子寿命显示与薄层电阻成反比，镀有较低电镀电流的Cu膜的寿命（/ spl tau /）和长寿命组件的强度（I）低于镀有较高电流且SIV失效较少的铜膜。

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《Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International》|2005年|P.99-101|共3页
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Ogawa S.; Shoji F.; Ohdaira T.; Suzuki I.; Shimada M.; Suzuki R.;
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中图分类工业技术;
关键词
copper; electroplated coatings; integrated circuit interconnections; integrated circuit metallisation; positron annihilation; spectroscopy; voids (solid); Cu; PALS; SIV failures; SIV phenomena; electroplated film vacancies; plating current; positron-annihilation life;

机译：铜;电镀涂层;集成电路互连;集成电路金属化;正电子an灭;光谱学;空洞（固体）;铜; PALS; SIV失效; SIV现象;电镀膜空位;电镀电流;正电子-灭寿命;

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4. Behavior of Vacancies in EP-Cu Films by Positron-Annihilation Lifetime Spectroscopy and its Impact on SIV Phenomena [C] . Shinichi Ogawa, Fumito Shoji, Toshiyuki Ohdaira, IEEE International Interconnect Technology Conference . 2005

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Behavior of vacancies in EP-Cu films by positron-annihilation lifetime spectroscopy and its impact on SIV phenomena

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