Chemical mechanical polishing (CMP) has become the key technology for wafer global planarization in ULSI manufacturing. In this paper, according to the motion relationship between the wafer and the polishing pad in rational and linear types of CMP machine, the movement tracks of particles on wafer surface are calculated. Then by calculating the number of the pixels of particle tracks in each small square on wafer surface, the within-wafer-nonuniformity(WIWNU) of material removal on wafer surface can. be received form motion forms of the two type machines. By analyzing the values of WIWNU, the better motion form between the wafer and the pad can be obtained. The results can provide theoretical guide to use and design of CMP equipment and to select the motion variables of CMP.
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