A giga-scale assist-gate (AG)-AND-type flash memory cell with 20-MB/s programming throughput for content-downloading applications

摘要

Proposes a new AND-type flash memory cell with an assist gate (AG), which has achieved a 20-MB/s programming throughput. For high-speed parallel programming on the order of kilobytes, fast cell programming (10 ps) and an extremely low channel current (I/sub ds/ /spl les/ 100 nA/cell) are necessary. These features were achieved by using the low current source-side injection method in which the AG was used as a program gate. The memory cell size has also been reduced to 0.104 /spl mu/m/sup 2/ by taking advantage of an AG using field isolation and a self-aligned floating gate. These technologies are the keys to giga-scale flash memories, of which the main application is content downloading.