REMOVAL OF NOVOLAC-BASED PHOTORESIST FILM USING LOW MOLECULAR WEIGHT ALCOHOLS

摘要

A new method to remove photoresist at low temperatures using low molecular weight alcohols (e.g., iso-propanol) is described. This process produces a clean, dry surface in a single step; no additional rinsing or drying is required. Results of atomic force microscopy (AFM) analysis show no appreciable change in micro-roughness of aluminum, silicon or silicon dioxide surfaces. X-ray Photoelectron Spectroscopy (XPS) of post isopropanol-treated surfaces indicates that contamination levels are similar to those resulting from RCA cleans. Ion implanted (2E12 and 2E15 atoms/cm~2) photoresist can also be stripped at room temperature by this process.