Room-temperature persistent spectral hole burning of rare-earth-ion-doped glasses prepared by sol-gel process

摘要

Abstract: Room temperature persistent spectral hole burning (PSHB) was observed in Sm$+2$PLU$/ and Eu$+3$PLU$/-doped Al$-2$/O$-3$/- SiO$-2$/ glasses prepared by a sol-gel method. The glasses were obtained by heating the gels in hydrogen gas and the spectral hole was burned in the excitation spectrum of the $+7$/F$-0$/ $YLD $+5$/D$-0$/ transition of the Sm$+2$PLU$/ and Eu$+3$PLU$/ ions. The depth of the hole burned at 77 K decreased with increasing the cycling temperature. The decrease in the hole-depth is due to the thermal relaxation of the burnt-state of OH bonds surrounding the rare-earth ions. The depth of hole burned in the Sm$+2$PLU$/-doped glass heated in 20 percent H$-2$/-80 percent N$-2$/ gas exhibited the PSHB at room temperature. We considered that the electron transfer between the rare-earth ions and the Al-related defect centers acts for hole burning. !9