Role of long-range and short-range Coulomb potentials in threshold characteristics under discrete dopants in sub-0.1 /spl mu/m Si-MOSFETs

摘要

We investigate the Coulomb potential associated with discrete dopants in sub-0.1 /spl mu/m Si-MOSFETs from the physical viewpoint. It is found that the discrimination of the Coulomb potential between the long-range and short-range parts is essential in correctly simulating the device characteristics under nonuniform discrete dopants. A new dopant model appropriate for the 3D drift-diffusion (DD) simulations is proposed and it is demonstrated that the present model could properly take into account the threshold voltage variations in sub-0.1 /spl mu/m MOSFETs.