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Orientation-induced molecular rectification in polymer films: improving organic-semiconductor device efficiency

机译:聚合物膜中取向诱导的分子整流:提高有机半导体器件效率

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Abstract: In the field of organic semiconductor devices, such as electroluminescent diodes or photovoltaic cells, a rectifying junction is mandatory to improve their efficiency. In order to build single polymer film photovoltaic cells, we realize an equivalent distributed p-n junction in a polymeric monolayer. For this purpose, we propose an inter-disciplinary principle derived from the application of nonlinear optical techniques to the technology of polymer semiconductors. We give experimental evidence that molecular rectification induced in an oriented amorphous polymer bearing polar chromophores improves efficiency of polymeric semiconductor device such as photovoltaic cells. Orientation is performed through DC- field ordering of the polar molecules contained in the polymer. Second harmonic generation is used as a probe of the molecular order and permits optimization of the sample orientation parameters, i.e., orientation-field, sample temperature, poling duration and cooling conditions to achieve the largest stable orientation. Additionally, to establish a model which describes charge injection and transport through such device, we propose to use Solid Electric Field Induced Second Harmonic Generation (SEFISHG) as an in situ internal field measurement technique. In this way, before orientation of the molecules, SEFISHG provides the electron work function difference between the two electrode materials, and after orientation, SEFISHG permits the measure of the internal field stored in the structure. !8
机译:摘要:在有机半导体器件领域,例如电致发光二极管或光伏电池,必须使用整流结来提高其效率。为了构建单个聚合物膜光伏电池,我们在聚合物单层中实现了等效的分布式p-n结。为此,我们提出了一种跨学科原理,该原理源自非线性光学技术在聚合物半导体技术中的应用。我们提供实验证据表明,在带有极性生色团的定向无定形聚合物中诱导的分子整流可提高聚合物半导体器件(例如光伏电池)的效率。通过聚合物中所含极性分子的DC场排序来进行取向。二次谐波的产生被用作分子顺序的探针,并允许优化样品取向参数,即取向场,样品温度,极化持续时间和冷却条件,以实现最大的稳定取向。另外,为了建立描述电荷注入和通过这种设备传输的模型,我们建议使用固体电场感应第二谐波产生(SEFISHG)作为原位内部场测量技术。这样,在分子取向之前,SEFISHG提供了两种电极材料之间的电子功函数差,而在取向之后,SEFISHG允许测量存储在结构中的内部场。 !8

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