512x512-element GeSi/Si heterojunction infrared FPA

摘要

Abstract: We have developed a monolithic 512 $MUL 512 element GeSi/Si heterojunction IR focal plane array (FPA). The operation mechanism of the GeSi/Si heterojunction detector is the same as that of the PtSi/Si Schottky-barrier detector. We have fabricated the GeSi/Si heterojunction using MBE technology, and have confirmed that ideal strained GeSi films are grown on Si substrate. We have evaluated the dependencies of spectral responsivity on the Ge composition, impurity concentration and GeSi thickness, and have optimized them for 8-12 $mu@m IR detection. The 512 $MUL 512 element FPA has a pixel size of 34 $MUL 34 $mu@m$+2$/ and a fill factor of 59 percent. A low noise equivalent temperature difference of 0.08 K was obtained with a 300 K background with a very small responsivity dispersion of 2.2 percent. !7