TRANSPORT PROPERTIES OF GALLIUM-DOPED PbTe

摘要

In this work results of the measurements of specifically electcal conductivity with total shielding from external radiation and with controlled enlightening by infrared laser of PbTe(Ga) in temperature range from 20K to 300K, are presented. The effect of persistent fotoconductivity effect registrated, which depends from concentration of gallium and the method of crystal grow. The results have been analyzed with in reference from the model which assumes existence of a deep impurity level forbidden area on which stabilization of the Fermi level is achieved only in specific area of the gallium concentration.