Parallel modeling of the IGBT electrothermal behavior

摘要

This paper presents a sequential and parallel models of an IGBT (insulated gate bipolar transistor) electrothermal behavior. The thermal model is described by a 3-D finite difference method. It allows to take into consideration the heat distribution dissipated in the device component. The parallel processing was carried out on four SPARC 20 workstations, with 64 Mo RAM memory on each node, and the sequential processing only on one node. The authors have chosen a network totally connected with a LAM configuration (a tool allowing to send and receive messages from one station to the other). To configure the LAM, they used the standard MPI program, which is applied in the C language, which allows great flexibility in the development of parallel code.