InGaAs quasi-quantum-wire FET on V-grooved substrate by selective growth with As/sub 2/ flux in hydrogen-assisted molecular beam epitaxy

摘要

A field effect transistor (FET) using a single InGaAs quasi-quantum wire (QWR) structure as a channel has been fabricated. The quasi-QWR structures have been fabricated with As/sub 2/ flux and atomic hydrogen irradiation using molecular beam epitaxy on V-grooved InP substrate. The V-shape is preserved during InAlAs barrier layer growth due to a suppressed migration of In atoms under As/sub 2/ flux. The V-groove is not preserved and hence the QWR cannot be fabricated under As/sub 4/ flux. The single InGaAs quasi-QWR is used as a channel of the FET. The FET demonstrated the good saturation characteristics and its maximum transconductance is 300 mS/mm at a drain voltage of 0.5 V.