A diagnostic setup for measurement of time-resolved electron beam distributions in high-power O-type devices

摘要

Characteristics of a new all-in-one setup for experimental determination of electron beam parameters of high-power microwave O-type devices are given. The measurements were made in the collector part of the device, where the electron beam expanded in the absence of external electric or magnetic fields after interaction with the rf structure. The analyzing section was mounted to the microwave tube instead of the collector unit to measure spatial, angular and energy distributions of the electron beam.