Effect of >100< channel direction for high performance SCE immune pMOSFET with less than 0.15 /spl mu/m gate length

摘要

A high performance CMOSFET with a channel along the >100< crystallographic axis has been developed. Current drivability of the pMOSFET is improved by about 15% by changing the channel direction from >110< to >100< due to an increase in hole mobility and high immunity against short channel effects (SCE). As a result, a drive current of 810 /spl mu/A//spl mu/m for nMOS and of 420 /spl mu/A//spl mu/m for pMOS with 0.14 /spl mu/m gate length has been achieved under 1 nA//spl mu/m off current at 1.8 V operation.