Conventional Hall devices are plate like, i.e. made in a thin semiconductor layer. We present here a Hall device made in a semi-infinite piece of semiconductr. Its active zone is limited by only one non-conductive surface. although the base of the device is open, the part of the limited active zone filled by the current remains thin. The novel device exhibits a sensitivity of 30 V/AT. We have show that the characteristics of the non-plate like Hall device when its size is small asymptotically approach the cahradteritcs of the conventional Hall plate. It opesn the door to the realisation of 3D Hall device in the technology o f the vertical hall devices. In order to use the novel sensor as a stand-alone device we improved it by an additional doping at the surface.
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机译：常规霍尔器件是板状的，即由薄半导体层制成。我们在这里介绍一种由半无限半导体制成的霍尔器件。它的有效区域仅由一个非导电表面限制。尽管器件的底部是开放的，但有限的有源区中被电流填充的部分仍然很薄。新颖的器件表现出30 V / AT的灵敏度。我们已经表明，当非板状霍尔器件的尺寸较小时，其特性渐近地接近常规霍尔板的特征。在垂直霍尔设备技术中，它为实现3D霍尔设备打开了大门。为了将新颖的传感器用作独立设备，我们通过在表面进行额外的掺杂对其进行了改进。
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