Field-effect semiconductor sensor for the detection of fluorocarbons

摘要

The large band gap material SiC was used to develop a high temperature field-effect structure SiC/epi-SiC/SiO_2/LaF_3/Pt. The sensitivity for different fluorocarbons ad CF_3CH_2F< CF_3CCl_3, CHClF_2, CF_3CH_2Cl and CCL_3F was investigated. Beside a more complex behaviour for the temperature range 200-300 deg C a selective detection of fluorine containing molecules was shown for a temperature of 380 deg C.