Eight-element-stressed Ge:Ga linear array: development and performance

摘要

We have developed an eight-element stressed Ge:Ga linear array. It has a compact and stable structure. The pixel size is 0.9 $MUL 0.9 $MUL 0.9 mm$+3$/, the pitch of the array is 1.0 mm, and the total sensitive area is 8.0 mm $MUL 1.0 mm. The longer wavelength cut-off is 200 microns, and the peak responsivity is 100 A/W in a high-background condition including cavity efficiencies. It has been demonstrated that this array has a useful performance in the high-background condition, such as for airborne and balloon-borne instruments. The structure of the stress assembly is provably extendable up to sixteen and more.