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Series connection of IGBTs in hard-switching applications

机译:硬开关应用中IGBT的串联

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摘要

A new circuit topology is presented which makes possible and safe the series connection of devices in very high voltage switching applications. This circuit behaves like a flyback converter and assures the uniform distribution of the voltage among the devices of the series. Within the proposed topology the active devices are hard switched. By means of this circuit the performances of a single IGBT module rated at 3300 V-1200 A are compared with those ones of the series connection of two IGBT modules rated at 1700 V-1200 A. The comparison is performed on an experimental basis and shows that the on-state voltage drop of the series is about twice that one of the single module, but switching losses are much lower for the series connection. Consequently, the proposed topology makes convenient the use of the series connection of IGBTs modules for frequencies larger than 3 kHz whereas the single high voltage IGBT module remains advantageous for frequency lower than 2 kHz. In other words the paper demonstrates that the series connection of the IGBTs can be used to extend the trade-off between conduction and switching losses also to high voltage modules.
机译:提出了一种新的电路拓扑,该拓扑使在高压开关应用中的设备串联成为可能且安全。该电路的行为类似于反激转换器,并确保该系列器件之间的电压均匀分布。在建议的拓扑结构内,将对有源设备进行硬交换。通过该电路,将额定值为3300 V-1200 A的单个IGBT模块的性能与额定值为1700 V-1200 A的两个IGBT模块的串联连接的性能进行比较。串联的通态压降约为单个模块之一的两倍,但是串联连接的开关损耗要低得多。因此,所提出的拓扑结构方便了将IGBT模块的串联用于频率大于3 kHz的情况,而单个高压IGBT模块对于频率低于2 kHz的情况仍然具有优势。换句话说,该论文证明了IGBT的串联可用于将导通损耗和开关损耗之间的折衷也扩展到高压模块。

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