LSI capability demonstration of an 0.15 /spl mu/m-0.3 /spl mu/m GaAs HEMT and PM-HEMT 3 level metallization E/D-technology for mixed signal circuits

摘要

A 16/spl times/16 bit parallel multiplier based on a 26 k sea-of-gates has been fabricated successfully to demonstrate the LSI capability of our mixed signal IC technology including pseudomorphic T-gate HEMTs for high speed as well as three levels of gold metallization for high integration complexity. To prove the high speed performance, a digital dynamic frequency divider operating in a frequency band from about 36 GHz up to almost 60 GHz has been realised.