首页> 外文会议>Meeting on tunneling reaction and low temperature chemistry >Temperature Dependence of Rate Constant for Tunneling Reaction HD + D → H +D_2 in Low Temperature Region 2.6-6.5 K: Experimental Evidence of Phonon-Assisted Tunneling
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Temperature Dependence of Rate Constant for Tunneling Reaction HD + D → H +D_2 in Low Temperature Region 2.6-6.5 K: Experimental Evidence of Phonon-Assisted Tunneling

机译:隧道反应HD + D→H + D_2在低温区域中的温度依赖性的温度依赖性2.6-6.5 K:声子辅助隧道的实验证据

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Rate constants for the tunneling reaction, HD + D→H + D_2, in solid HD have been determined by using ESR in the very low temperature range of 2.6 K - 6.5 K. The rate constants increase steeply with increasing temperature above 5 K, while they are almost independent of temperature below 5 K. The results above 5 K do not coincide with theoretical values calculated by the gas phase model. Phonon-assisted mechanism is proposed to account for the remarkable temperature dependence of the tunneling reaction in solid HD.
机译:通过在2.6k - 6.5k的非常低温范围内使用ESR来确定用于隧道反应的速率常数HD + D→H + D_2。速率常数在5 k以上的温度升高时,速率常数增加。 它们几乎与低于5k的温度。5 k以上的结果与通过气相模型计算的理论值不一致。 提出了辅助机制,以解释固体高清中隧道反应的显着温度依赖性。

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