The structures of extended defects in Si and other materials studied by HRTEM

摘要

The recent structural studies of point-defect-agglomerates in Si and related materials by high resolution transmission electron microscopy are complied in order to provide a more generalized view of the structures of extended defects. The structural data are presented on the planar defects created by electron irradiation and ion-implantation. An emphasis is placed on the extension of studies made possible only by structure determination by HRTEM; the mechanism of agglomeration is discussed, the unit structures of point defects are derived, and the electronic structures of the agglomerates are elucidated.