Abstract: Using the idea of achieving a high index of refraction on a transition via populating only one of the dressed states corresponding to this transition, we propose a $Lambda@-scheme that provides a ratio index/absorption $APEQ 300 on a strong field and give realistic numbers for the susceptibility $chi@.!6
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机译：摘要：通过仅在过渡状态中填充一个相应的修整状态来实现高折射率的想法，我们提出了一种$ Lambda @方案，该方案可在强场上提供比率折射率/吸收率$ APEQ 300并给出磁化率$ chi @。！6的真实数字
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