A comprehensive assessment of contact oxide etch damage usingdevice monitor and in-line noncontact testing

摘要

We report here a direct correlation between a Keithley Quantoxin-line tester and full-flow device monitors for contact oxide etchdamage. Gate leakage measured with the device monitor were used tochoose the least damaging of four oxide etchers. The same ranking wasconfirmed using Quantox flatband voltage measurements, but with a muchfaster turnaround time. Also, the Quantox capabilities were used toisolate the primary contributors of damage in one particular reactor,and the resulting reduction in damage was confirmed with the testmonitors. The capability to quickly isolate specific portions of arecipe is demonstrated here, and it is subsequently confirmed with thefull-flow device monitor. The advantage of using this technique inconjunction with a full-flow device monitor results in a much fasterturn around for isolation of plasma damage