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Global optimization of masks, including film stack design to restore TM contrast in high NA TCC's

机译:全球优化面具,包括胶片堆设计,以恢复高NA TCC的TM对比度

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We provide an expanded description of the global algorithm for mask optimization introduced in our earlier papers, and discuss auxiliary optimizations that can be carried out in the problem constraints and film stack. Mask optimization tends inherently to be a problem with non-convex quadratic constraints, but for small problems we can mitigate this difficulty by exploiting specialized knowledge that applies in the lithography context. If exposure latitude is approximated as maximization of edge slope between image regions whose intensities must print with opposite polarity, we show that the solution space can be approximately divided into regions that contain at most one local minimum. Though the survey of parameter space to identify these regions requires an exhaustive grid search, this search can be accelerated using heuristics, and is not the rate-limiting step at SRAM scale or below. We recover a degree of generality by using a less simplified objective function when we actually assess the local minima. The quasi-binary specialization of lithographic targets is further exploited by searching only in the subspace formed by the dominant joint eigenvectors for dark region intensity and bright region intensity, typically reducing problem dimensionality to less than half that of the full set of frequency-domain variables (i.e. collected diffraction orders). Contrast in this subspace across the bright/dark edge will approximately reflect exposure latitude when we apply the standard fixed edge-placement constraints of lithography. However, during an exploratory stage of optimization we can define preliminary tolerances which more explicitly reflect constraints on devices, e.g. as is done with compactor codes for design migration. Our algorithm can handle vector imaging in a general way, but for the special case of unpolarized illumination and a lens having radial symmetry (but arbitrary source shape) we show that the bilinear function which describes vector interference within the film stack can be expressed in terms of three generic radial functions, enabling rapid numerical evaluation of the Hopkins kernel. By inspection these functions show that one can in principle recover classical scalar-like imaging even at high NA by exposing a very thin layer spaced above a reflective substack. The reflected image largely restores destructive interference in TM polarized fringes, if proper phasing is achieved. With an ideal reflector, the first-order azimuthal contrast loss term vanishes in all TCC components, and complete equivalence to scalar imaging is obtained in classical two-beam imaging.
机译:我们提供了对我们之前的论文中引入的全局掩模优化算法的扩展描述,并讨论了可以在问题约束和胶卷堆栈中执行的辅助优化。掩模优化本质上是非凸二次约束的问题,但对于小问题,我们可以通过利用在光刻背景中应用的专业知识来减轻这种困难。如果曝光纬度近似为强度必须以相反极性打印的图像区域之间的边缘斜率的最大化,则表明解决方案空间可以大致分为包含在大多数局部最小值的区域。虽然对参数空间的调查识别这些区域需要详尽的网格搜索,但可以使用启发式加速该搜索,并且不是SRAM刻度或下方的速率限制步骤。当我们实际评估当地最小值时,我们通过使用更少简化的目标函数来恢复一般性。通过仅在由暗区强度和亮区强度的主导关节特征向量形成的子空间中搜索,通常可以利用光刻靶的准二元专业化,通常将问题维度降低到少于一组频域变量的一半。 (即收集的衍射令)。当我们应用光刻标准固定边缘放置限制时,在明亮/暗边缘的该子空间中的对比度将大致反映曝光纬度。然而,在优化的探索阶段,我们可以定义更明确地反映设备的限制的初步公差,例如,更明确地反映给设备的限制。正如用压实机码所做的,用于设计迁移。我们的算法可以以一般方式处理矢量成像,但对于具有径向对称(但任意源形状)的外透镜的特殊情况,我们表明,描述胶片堆栈内的矢量干扰的双线性功能可以以术语表示三个通用径向函数,使霍普金斯内核的快速数值评估。通过检查,这些功能表明,即使在高于反射家具上方间隔开的非常薄的层,也可以原则上恢复古典标量样成像。如果实现了适当的相位,则反射图像在很大程度上恢复了TM偏振条纹的破坏性干扰。利用理想的反射器,在所有TCC组件中,在所有TCC组件中消失一阶的方位角对比度损失术语,并且在经典双光束成像中获得了对标量成像的完整等价。

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