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A Dynamic Voltage Balancing Control Method for Series-Connected SiC MOSFETs in High Voltage Applications

机译:高压应用中串联SiC MOSFET的动态电压平衡控制方法

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In high voltage applications, multilevel converters and series-connected power devices are two effective ways to improve the voltage blocking capability. When connecting SiC MOSFETs in series, due to its fast switching speed, the dynamic voltage imbalance problem is hard to tackle. Compared with other methods, the capacitive coupling gate drive circuit has a simpler circuit structure and a faster response speed, and is suitable for SiC MOSFETs. However, the driving capability of this approach is directly affected by the DC-bus voltage, and it is difficult to achieve perfect dynamic voltage balancing when the DC-bus voltage changes. In this paper, to handle this problem, an effective dynamic voltage balancing control method based on over-drive characteristic is proposed. When DC-bus voltage changes, dynamic voltage balancing is realized by controlling a variable voltage source, thus adjusting the over-drive depth of high-side device and compensating for the effect of DC-bus voltage variation on the driving capability. Experimental studies are carried out to verify the validity and feasibility of the proposed dynamic voltage balancing control method. In the design range, the dynamic and static voltage between the series-connected SiC MSOFETs are balanced well.
机译:在高压应用中,多电平转换器和串联功率器件是提高电压阻断能力的两种有效方法。当串联连接SiC MOSFET时,由于其快速的开关速度,动态电压不平衡问题很难解决。与其他方法相比,电容耦合栅极驱动电路具有更简单的电路结构和更快的响应速度,并且适用于SiC MOSFET。但是,这种方法的驱动能力直接受到直流母线电压的影响,并且当直流母线电压发生变化时,很难实现完美的动态电压平衡。针对这一问题,提出了一种有效的基于过驱动特性的动态电压平衡控制方法。当直流母线电压发生变化时,可通过控制可变电压源来实现动态电压平衡,从而调节高端设备的过驱动深度,并补偿直流母线电压变化对驱动能力的影响。进行了实验研究,以验证所提出的动态电压平衡控制方法的有效性和可行性。在设计范围内,串联的SiC MSOFET之间的动电压和静电压得到了很好的平衡。

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