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Scattering Mechanisms in Arsenide Indium

机译：砷化物铟的散射机制

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The scattering rates of typical scattering mechanisms in indium arsenide were studied. The low-field dependence of the drift mobility of electrons vs temperature is calculated. A set of initial parameters for modeling has been proposed, which provides a satisfactory agreement of the calculated characteristics with the known results.

机译：研究了砷铟铟散射机制的散射率。计算电子VS温度的漂移迁移率的低场依赖性。已经提出了一组用于建模的初始参数，这提供了所计算的特征与已知结果的令人满意的协议。

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《International Conference on Electronics and Nanotechnology 》|2019年|850 p. :|共4页
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Tetiana Saurova; Victoria Bors;
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中图分类真空电子技术 ;
关键词
Scattering; Impurities; Electron mobility; Electric fields; Indium; Temperature; Phonons;

机译：散射;杂质;电子迁移率;电场;铟;温度;声子;

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专利

1. An energetic study on the formation of self-assembled indium arsenide nanostructures grown on indium gallium arsenide/indium phosphide and gallium arsenide substrates [J] . F Shi, Kuo-Lih Chang, K C Hsieh Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems . 2007 ,第1期

机译：在砷化铟镓/磷化铟和砷化镓衬底上生长的自组装砷化铟纳米结构形成的有力研究
2. Electron Scattering with Spin Flip in Indium Antimonide and Indium Arsenide [J] . R. I. Bashirov, M. M. Gadzhialiev, Z. Sh. Pirmagomedov Physics of the solid state . 2009 ,第4期

机译：自旋翻转在锑化铟和砷化铟中的电子散射
3. EFFECT OF MELTING ON HIGH-TEMPERATURE MECHANISMS OF HEAT AND CHARGE TRANSPORT IN INDIUM ARSENIDE [J] . Ya.B. Magomedov, G.G. Gadzhiev, Sh.M. Ismailov Bulletin of the Russian Academy of Sciences. Physics . 2005 ,第7期

机译：熔化对砷化铟传热和电荷输运的高温机理的影响
4. Scattering Mechanisms in Arsenide Indium [C] . Tetiana Saurova, Victoria Bors 2019 IEEE 39th International Conference on Electronics and Nanotechnology . 2019

机译：砷化铟的散射机理
5. MOCVD growth and characterization of indium arsenide antimonide/indium arsenide(antimonide phosphide) on indium arsenide substrate for the mid-infrared laser applications. [D] . Wu, Di. 1999

机译：在中红外激光应用中，在砷化铟衬底上进行砷化铟锑化物/砷化铟（磷化锑）的MOCVD生长和表征。
6. Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire [O] . Tino Wagner, Fabian Menges, Heike Riel, 2018

机译：砷化铟锡纳米线的组合扫描探针电学和热学表征
7. Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm [O] . Johns Steven 1964- 1991

机译：砷化镓铟/铝铟砷化物和砷化镓铝铟砷/铝铟砷化物MQW器件在1.3μm的室温载流子寿命和光学非线性
8. Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium Arsenide, Indium Phosphide, Indium Arsenide, and Gallium Antimonide. [R] . Brennan, K. F. 1984

机译：砷化镓，磷化铟，砷化铟和锑化镓中电子和空穴高能迁移的理论研究。

Scattering Mechanisms in Arsenide Indium

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