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Enhanced Piezoelectric $mathrm{AL}_{1-mathrm{X}}mathrm{SC}_{mathrm{X}}mathrm{N}$ RF-MEMS Resonators for Sub-6 GHz RF-Filter Applications: Design, Fabrication and Characterization

机译：用于子模块的增强型压电 $ mathrm {AL} _ {1- mathrm {X}} mathrm {SC} _ { mathrm {X}} mathrm {N} $ RF-MEMS谐振器-6 GHz射频滤波器应用：设计，制造和表征

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This paper reports the design, fabrication and characterization of bulk acoustic wave (BAW) resonators of the SMR-type (surface mounted resonator) with highly c-axis oriented Al0.8Sc0.2N thin-films. Various filter topologies have been demonstrated for high frequencies with sharp roll-off, wide bandwidth BW and low insertion loss IL (rel. 3dB-BW up to 9% and min. IL of 0.9 dB to 1.5 dB at 2350 to 2550 MHz). Furthermore, the challenges regarding the integration of $mathrm{Al}_{1-mathrm{x}}mathrm{Sc}_{mathrm{x}}mathrm{N}$ for n79 applications (4400 to 5000 MHz) are indicated. The demonstrations show promising results regarding acoustic-only filters at 5G frequencies.

机译：本文报道了具有高c轴取向Al的SMR型（表面安装谐振器）体声波（BAW）谐振器的设计，制造和特性。 0.8 SC 0.2 N薄膜。已经证明了各种滤波器拓扑结构可用于高频，陡峭的滚降，宽带宽BW和低插入损耗IL（在2350至2550 MHz时，相对3dB-BW高达9％，最小IL为0.9 dB至1.5 dB）。此外，关于整合的挑战 $ \ mathrm {Al} _ {1- \ mathrm {x}} \ mathrm {Sc} _ {\ mathrm {x}} \ mathrm {N} $ 表示适用于n79应用（4400至5000 MHz）。演示展示了有关5G频率的纯声滤波器的令人鼓舞的结果。

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《IEEE International Conference on Micro Electro Mechanical Systems》|2020年|1258-1261|共4页
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Andreas Bogner; Ruediger Bauder; Hans-Joerg Timme; Thomas Forster; Christian Reccius; Robert Weigel; Amelie M. Hagelauer;
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入库时间 2022-08-26 13:55:10

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Enhanced Piezoelectric $mathrm{AL}_{1-mathrm{X}}mathrm{SC}_{mathrm{X}}mathrm{N}$ RF-MEMS Resonators for Sub-6 GHz RF-Filter Applications: Design, Fabrication and Characterization

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