Performance modeling of Ⅲ-Ⅴ antimonide-based barrier infrared detectors

摘要

The paper presents the analysis of the performance of the InAs/InAsSb superlattice barrier detector operated at 230 K and long-wavelengths infrared spectrum (LWIR). To determine the position of the electron miniband and the first heavy hole state in the superlattice, we have used a k p. Having the position of the conduction band and valence band we have to determine a correct band alignment between the barrier and absorber layer - the barrier in the valence band must be sufficiently low to ensure the flow of optically generated holes. We have considered an AlSb material for barrier best aligned to LWIR InAs/InAsSb superlattice absorber.