Design and Simulation of a High-Efficiency Inverse Class-F Power Amplifier for S-Band Application

摘要

In this paper, a high efficiency Class-F−1 power amplifier (PA) for the S-Band application is presented. The load network of the proposed Class-F−1 PA satisfies the impedance requirements at $f_{0}, 2 f_{0}$, and $3 f_{0}$ frequency. The simulation results verify the analytical results. This power amplifier has been designed based on GaN HEMT device CGH40035F at a frequency band from 2.2-2.4 GHz. The results show drain efficiency and output power higher than 65% and 44.6 dBm, respectively. The obtained results show that the desired characteristics for the proposed PA have been obtained.