Analysis of Extreme Power Consumption of IGBT Based on Heat Balance

摘要

The maximum power consumption of the insulated gate bipolar transistor (IGBT) is an important part of the safe working area, which is related to the external heat dissipation device, internal thermal resistance and operating conditions. The maximum power consumption given in the device manual is an ideal value, which is difficult to reflect the actual operating conditions. If the design is improper, the IGBT thermal breakdown will fail. Based on the analysis of temperature characteristics of IGBT power consumption and steady-state thermal resistance of junction-shell, the thermal stability point, unstable point and critical point of junction temperature are obtained by thermal balance analysis of temperature curve of IGBT power consumption and temperature curve of junction-shell heat transfer power consumption, and then the limit power consumption of IGBT at critical point is obtained. The thermal failure mechanism of IGBT is analyzed for the positive feedback relationship between IGBT junction temperature and power consumption at unstable point, and finally experimental verification is carried out.