Analysis MOSFET Parasitic Capacitances to Class- B Power Amplifier

摘要

This paper has presented the analysis of class-B power amplifier with MOSFET parasitic nonlinear capacitances. Since in the PA, efficiency, linearity, and power capacity are dependent on the parasitic elements of the MOSFET transistor. In this paper, we investigate the efficiency, linearity, and power capacity with transistor parasitic elements. The measurement and simulation analysis have been made for the IRF510 model transistor in PSpice simulation. The experimental results confirm theoretical analysis on the parasitic elements of the MOSFET transistor that shows the validity performed analysis. The measurement results show an output power of 19.4 dBm at input power -10 dBm for 6 MHz with PAE of 40%.