Experimental Determination of the Driving Force for Switching in TiN/a-Si/TiOx/TiN RRAM Devices

摘要

TiN/a-Si/TiOx/TiN RRAM devices show non-linear I-V characteristics with analog and self-compliant switching. The non-filamentary switching is significant only above a current threshold, as determined using a soft breakdown detection technique. Pulse monitoring and a-Si thickness variation experiments confirm that the current through the device is the dominant driving force for defect profile modulation in the TiOx switching layer. The current-accelerated defect movements results in self-compliant switching, eliminating the need for external current compliance for these devices.