Study on Performance of Capacitor-less LDO with Different Types of Resistor

摘要

This paper studies the impact of utilizing different resistor types in capacitor-less low drop-out (LDO) voltage regulator on its key performance characteristics. In order to achieve this, a 1.8 V LDO voltage regulator is designed and characterized using 180 nm CMOS technology with a supply voltage of 3.3 V. Simulations are done in schematic level using Cadence on five different types of resistor for the same LDO, and the performance in terms of output voltage accuracy, stability and power supply rejection ratio (PSRR) are compared. From the simulation results, significant differences are observed in the LDO's performance with different types of resistor. The LDO with hpoly resistor gives the best results in terms of stability while pdiffb resistor LDO produces the highest PSRR.