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Effects of Plasma Etching on Insulating Performance of Epoxy Resin Considered for GIL Insulator

机译:等离子刻蚀对GIL绝缘子所考虑的环氧树脂绝缘性能的影响

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The flashover along the epoxy insulator surface seriously affects insulating performance. To improve the flashover characteristics of insulators, plasma etching is proposed to change the physical and chemical properties. The plasma etching method can prevent the formation and development process of flashover. In this paper, epoxy insulator surface morphology is observed using SEM. Surface charge behaviors and trap characteristics are researched, and mechanism of the effect of plasma etching is put forward. Then the mechanism is verified by flashover voltage test. In different etching stages, different factors play a decisive role. With the etching time increasing, the surface roughness keeps increasing; the surface charge dissipation is slowed down first, then accelerate and then is slowed down again; the trap depth increases first, then decreases and increases at last; the flashover voltage increases at first, and then decreases and increases again at last. And it can be concluded that etching for 5 min is the best to improve insulation performance.
机译:沿着环氧绝缘体表面的飞弧会严重影响绝缘性能。为了改善绝缘子的闪络特性,提出了等离子体刻蚀以改变其物理和化学性质。等离子体蚀刻方法可以防止飞弧的形成和发展过程。在本文中,使用SEM观察环氧绝缘子的表面形态。研究了表面电荷行为和俘获特性,并提出了等离子体刻蚀效果的机理。然后通过闪络电压测试验证了该机制。在不同的蚀刻阶段,不同的因素起着决定性的作用。随着刻蚀时间的增加,表面粗糙度不断增加。表面电荷耗散先减慢,然后加速,然后再减慢。陷阱深度先增加,然后减少,最后增加。闪络电压首先增加,然后降低,最后再次增加。可以得出结论,蚀刻5分钟是提高绝缘性能的最佳方法。

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