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A 28-GHz CMOS Broadband Single-Path Power Amplifier with 17.4-dBm P1dB for 5G Phased-Array

机译:适用于5G相控阵的28GHz CMOS宽带单路功率放大器,具有17.4dBm P1dB

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This paper reports a fully integrated broadband and linear power amplifier (PA) for 5G phased-array. Weakly-and strongly-coupled transformers are compared and analyzed in detail. The output strongly-coupled transformer is designed to transfer maximum power. The inter-stage weakly-coupled transformer is optimized to broaden the bandwidth. Besides, linearity is highly improved by operating the PA in deep class AB region. Designed and implemented in 65-nm CMOS process with 1V supply, the two-stage PA delivers a maximum small-signal gain of 19 dB. Maximum 1-dB compressed power (P1dB) of 17.4 dBm and saturated output power (PSAT) of 18 dBm are measured at 28 GHz. The power-added efficiency (PAE) at P1dB is 26.5%. The measured P1dBis above 16 dBm from 23 to 32 GHz, covering potential 5G bands worldwide around 28 GHz.
机译:本文报告了用于5G相控阵的完全集成的宽带和线性功率放大器(PA)。对弱耦合和强耦合变压器进行了详细的比较和分析。输出强耦合变压器旨在传递最大功率。优化了级间弱耦合变压器,以扩大带宽。此外,通过在AB级深区域工作PA可以极大地改善线性度。两级功率放大器采用65nm CMOS工艺设计并以1V电源实现,可提供19 dB的最大小信号增益。最大1dB压缩功率(P 1dB )以及17.4 dBm的饱和输出功率(P SAT 在28 GHz时测得18 dBm的)。功率附加效率(P AE )在P 1dB 是26.5%。测得的P 1dB 在23至32 GHz范围内高于16 dBm,涵盖了全球范围内28 GHz左右的潜在5G频段。

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